| PART |
Description |
Maker |
| US1K US1A US1J US1B US1G US1D |
1Amp ultra fast rectifier 50to800 volts
|
Shanghai Lunsure Electronic Tech
|
| MUR140 MUR120 MUR160 MUR110 MUR1100 MUR115 MUR105 |
1Amp super fast recovery rectifier 50to1000 volts
|
Shanghai Lunsure Electronic Tech
|
| UF4003GP UF4001GP |
1Amp glass passivated ultra fast recovery rectifier 50to1000 volts
|
Shanghai Lunsure Electronic Tech
|
| 6A8-G 6A05-G 6A10-G 6A1-G 6A2-G 6A4-G 6A6-G |
General Purpose Rectif
|
Comchip Technology Co., Ltd.
COMCHIP[Comchip Technology]
|
| STGW30N90D GW30N90D |
N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT N沟道900V - 30A47 IGBT的非常快速PowerMESH
|
STMicroelectronics N.V.
|
| IRFPF30 |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 900V，的Rds（on）\u003d 3.7ohm，身份证\u003d 3.6A
|
International Rectifier, Corp.
|
| ERB05GGR ERB05JGR |
Fast Recovery Pack: DO-41
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:400 & 600V CURRENT: 0.5A
|
Gulf Semiconductor
|
| FQP8N90C FQPF8N90C |
900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBF20 |
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
|
IRF[International Rectifier]
|
| IRFPF50 IRFPF50PBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=900V, Rds(on)=1.6ohm, Id=6.7A)
|
International Rectifier
|
| 10BQ060 |
SCHOTTKY RECTIFIER, 1Amp
|
IRF[International Rectifier]
|
| APT60D40SG APT60D40B APT60D40B_05 APT60D40BG APT60 |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 60; VR (V): 400; trr (nsec): 30; VF (V): 1.3; Qrr (nC): 540; 60 A, 400 V, SILICON, RECTIFIER DIODE
|
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
